Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference23 articles.
1. Numerical study of Czochralski growth of silicon in an axisymmetric magnetic field
2. Oxygen transport under an axial magnetic field in Czochralski silicon growth
3. Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon melt
4. Use of an inhomogenous magnetic field for silicon crystal growth
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique;Silicon;2020-09-14
2. Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom;Crystal Research and Technology;2018-08-05
3. Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon;Measurement Science and Technology;2012-11-28
4. Transition from the Steady to the Oscillatory Thermocapillary Convection in a Rectangular Container Under Various Cold Wall Temperature Effects;Microgravity Science and Technology;2010-11-05
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