Numerical study of Czochralski growth of silicon in an axisymmetric magnetic field
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Czochralski Silicon Crystals Grown in a Transverse Magnetic Field
2. Czochralski Silicon Crystal Growth in the Vertical Magnetic Field
3. Homogeneous Dopant Distribution of Silicon Crystal Grown by Vertical Magnetic Field-Applied Czochralski Method
4. Semiconductor Silicon 1986;Barraclough,1986
5. Silicon crystal growth in a cusp magnetic field
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1. Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique;Silicon;2020-09-14
2. Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC;Journal of Crystal Growth;2018-09
3. Vertical Bridgman Technique and Dewetting;Crystal Growth Processes Based on Capillarity;2010-04-20
4. Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications;Springer Handbook of Crystal Growth;2010
5. NUMERICAL INVESTIGATION OF SILICON MELT FLOW IN A SHALLOW ANNULAR POOL UNDER AN AXIAL MAGNETIC FIELD;International Journal of Modern Physics B;2007-07-30
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