Properties of non-stoichiometric nitrogen doped LPCVD silicon thin films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.200900624/fullpdf
Reference15 articles.
1. The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique
2. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study
3. Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation
4. Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia
5. Plasma enhanced chemical vapor deposition of nitrogen-incorporated silicon oxide films using TMOS/N2O gas
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