Kinetic Monte Carlo simulation of low-pressure chemical vapor deposition of silicon nitride: Impact of gas flow rate and temperature on silicon cluster size and density-Reference-Cited by-同舟云学术

Kinetic Monte Carlo simulation of low-pressure chemical vapor deposition of silicon nitride: Impact of gas flow rate and temperature on silicon cluster size and density

Published:2014-10 Issue: Volume:26 Page:555-560
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Bouhadiche Adil,Bouridah Hachemi,Boutaoui Noureddine

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films

2. Evolution with annealing treatments of the size of silicon nanocrystallites embedded in a SiNx matrix and correlation with optical properties

3. Formation and charging effect of Si nanocrystals in a-SiNx/a-Si/a-SiNx structures

4. Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

5. Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters

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1. Effects of N/Si ratio on mechanical properties of amorphous silicon nitride coating;Materials Research Express;2023-11-01

2. Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness;Silicon;2023-03-27

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4. Multiscale Modeling in Chemical Vapor Deposition Processes: Models and Methodologies;Archives of Computational Methods in Engineering;2020-01-21

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