Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation-Reference-Cited by-同舟云学术

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Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation

Published:2005-04-05 Issue:6 Volume:20 Page:481-484
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zheng Zhong-Shan,Liu Zhong-Li,Zhang Guo-Qiang,Li Ning,Li Guo-Hua,Ma Hong-Zhi,Zhang En-Xia,Zhang Zheng-Xuan,Wang Xi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Transient Radiation Effects in SOI Static RAM Cells

2. SEU in SOI SRAMs-a static model

3. Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

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1. Total ionizing dose radiation hardening technology based on double-charge multiple-step ion implantation;Microelectronics Reliability;2023-03

2. The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation;Science China Materials;2016-08

3. Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide;Microelectronics Reliability;2014-09

4. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers;Acta Physica Sinica;2011

5. Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers;Chinese Physics B;2010-10

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