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Void formation in the Cu layer during thermal treatment of SiNx/Cu/Ta73Si27/SiO2/Si systems

  • Published:2004-12-27 Issue:1-2 Volume:40 Page:135-142
  • ISSN:0232-1300
  • Container-title:Crystal Research and Technology
  • language:en
  • Short-container-title:Cryst. Res. Technol.

Author:

Hübner R.,Reiche R.,Hecker M.,Mattern N.,Hoffmann V.,Wetzig K.,Heuer H.,Wenzel Ch.,Engelmann H.-J.,Zschech E.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of Al–Nb alloy film to metal capping layer on Cu;Japanese Journal of Applied Physics;2016-01-25

2. Oxidation Characteristics of Thin Al–Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu;Japanese Journal of Applied Physics;2012-05-21

3. Oxidation Characteristics of Thin Al–Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu;Japanese Journal of Applied Physics;2012-05-01

4. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17

5. Diffusion and Barrier Layers;Copper Interconnect Technology;2009
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