Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning-Reference-Cited by-同舟云学术

Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning

Published:2018-08-12 Issue:40 Volume:28 Page:1803728
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yan Xiaobing¹²,Zhang Lei¹,Chen Huawei³,Li Xiaoyan¹,Wang Jingjuan¹,Liu Qi⁴,Lu Chao⁵,Chen Jingsheng²,Wu Huaqiang⁶,Zhou Peng³^ORCID

Affiliation:

1. National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices; Key Laboratory of Digital Medical Engineering of Hebei Province; College of Electron and Information Engineering; Hebei University; Baoding 071002 P. R. China

2. Department of Materials Science and Engineering; National University of Singapore; Singapore 117576 Singapore

3. State Key Laboratory of ASIC and System; School of Microelectronics; Fudan University; Shanghai 200433 China

4. Key Laboratory of Microelectronic Devices & Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 P. R. China

5. Electrical and Computer Engineering Department; Southern Illinois University Carbondale, Illinois; 1230 Lincoln Drive Carbondale IL 62901 USA

6. Institute of Microelectronics; Tsinghua University; Beijing 100084 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Science Research Program of University in Hebei Province

Top-notch Youth Project of University in Hebei Province

Midwest universities of Hebei University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials