p-Doping of Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers for High-Performance Transistors and Organic Solar Cells-Reference-Cited by-同舟云学术

p-Doping of Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers for High-Performance Transistors and Organic Solar Cells

Published:2018-06-03 Issue:31 Volume:28 Page:1802055
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wijeyasinghe Nilushi¹,Eisner Flurin¹,Tsetseris Leonidas²,Lin Yen-Hung¹,Seitkhan Akmaral³,Li Jinhua⁴,Yan Feng⁴,Solomeshch Olga⁵,Tessler Nir⁵,Patsalas Panos⁶,Anthopoulos Thomas D.¹³^ORCID

Affiliation:

1. Department of Physics and the Centre for Plastic Electronics; Imperial College London; SW7 2AZ London UK

2. Department of Physics; National Technical University of Athens; GR-15780 Athens Greece

3. Division of Physical Sciences and Engineering; King Abdullah University of Science and Technology; Thuwal 23955-6900 Saudi Arabia

4. Department of Applied Physics; The Hong Kong Polytechnic University; Hung Hom Kowloon Hong Kong

5. Department of Electrical Engineering; Technion-Israel Institute of Technology; Haifa 3200 Israel

6. Department of Physics; Laboratory of Applied Physics; Aristotle University of Thessaloniki; 54124 Thessaloniki Greece

Funder

European Research Council

Engineering and Physical Sciences Research Council

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference92 articles.

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4. Hole‐Transport Materials for Perovskite Solar Cells

5. Perovskite solar cells employing organic charge-transport layers

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