A Possible Reaction Pathway to Fabricate a Half-Metallic Wire on a Silicon Surface-Reference-Cited by-同舟云学术

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A Possible Reaction Pathway to Fabricate a Half-Metallic Wire on a Silicon Surface

Published:2012-12-06 Issue:18 Volume:23 Page:2233-2238
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lu Yun Hao,Jin Hongmei,Zhu Hongjun,Yang Shuo-Wang,Zhang Chun,Jiang Jian Zhong,Feng Yuan Ping

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Electronics using hybrid-molecular and mono-molecular devices

2. Molecular Electronics

3. Intrinsic magnetism at silicon surfaces

4. Spatially Resolved Tunneling along a Molecular Wire

5. Phase Coherent Electronics: A Molecular Switch Based on Quantum Interference

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1. Multi‐Functional Spin Photogalvanic Device Based on 2D Half‐Metallic Ferromagnets;Advanced Electronic Materials;2024-03-11

2. Self-organized C70/C60 heterojunction nanowire arrays on Si(1 1 0) for Si-based molecular negative differential resistance nanodevices;Applied Surface Science;2020-11

3. Computational Design of One‐Dimensional Ferromagnetic Semiconductors in Transition Metal Embedded Stannaspherene Nanowires;Chinese Journal of Chemistry;2019-08-26

4. Electronic Structure and Spin Transport Properties of a New Class of Semiconductor Surface-Confined One-Dimensional Half-Metallic [Eu-(CnHn–2)]N (n = 7–9) Sandwich Compounds and Molecular Wires: First Principle Studies;The Journal of Physical Chemistry C;2018-06-21

5. Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application;Scientific Reports;2017-05-31

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