Computational Design of One‐Dimensional Ferromagnetic Semiconductors in Transition Metal Embedded Stannaspherene Nanowires-Reference-Cited by-同舟云学术

Computational Design of One‐Dimensional Ferromagnetic Semiconductors in Transition Metal Embedded Stannaspherene Nanowires

Published:2019-08-26 Issue:10 Volume:37 Page:1021-1024
ISSN:1001-604X
Container-title:Chinese Journal of Chemistry
language:en
Short-container-title:Chin. J. Chem.

Author:

Li Xingxing¹,Yang Jinlong¹

Affiliation:

1. Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum PhysicsUniversity of Science and Technology of China Hefei Anhui 230026 China

Publisher

Wiley

Subject

General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cjoc.201900166

Reference41 articles.

1. First-principles design of spintronics materials

2. CrXTe3(X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors

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4. Ferromagnetism in Semihydrogenated Graphene Sheet

5. Computational discovery of ferromagnetic semiconducting single-layerCrSnTe3

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