A Bamboo-Like GaN Microwire-Based Piezotronic Memristor-Reference-Cited by-同舟云学术

A Bamboo-Like GaN Microwire-Based Piezotronic Memristor

Published:2016-05-25 Issue:29 Volume:26 Page:5307-5314
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Liu Haitao¹²,Hua Qilin²,Yu Ruomeng³,Yang Yuchao⁴,Zhang Taiping²,Zhang Yingjiu¹,Pan Caofeng²

Affiliation:

1. Department of Physics and Laboratoryof Materials Physic; Zhengzhou University; Zhengzhou 450001 P. R. China

2. Beijing Institute of Nanoenergy and Nanosystems; Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST); Beijing 100083 P. R. China

3. School of Materials Science and Engineering; Georgia Institute of Technology; Atlanta Georgia 30332-0245 USA

4. Institute of Microelectronics; Peking University; Beijing 100871 P. R. China

Funder

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Beijing City Committee of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference36 articles.

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4. Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

5. Resistance switching memories are memristors

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