Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure-Reference-Cited by-同舟云学术

Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

Published:2011-09 Issue:5 Volume:110 Page:053703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chang Yao-Feng,Chang Ting-Chang,Chang Chun-Yen

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3630119

Reference16 articles.

1. Low current resistive switching in Cu–SiO2 cells

2. High switching endurance in TaOx memristive devices

3. Multilevel resistive switching in Ti/CuxO/Pt memory devices

4. Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

5. Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

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