Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance-Reference-Cited by-同舟云学术

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Published:2019-05-08 Issue:20 Volume:30 Page:1902028
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zare Bidoky Fazel¹^ORCID,Tang Boxin²,Ma Rui³,Jochem Krystopher S.²,Hyun Woo Jin²,Song Donghoon²,Koester Steven J.³,Lodge Timothy P.¹²,Frisbie C. Daniel²

Affiliation:

1. Department of Chemistry University of Minnesota 207 Pleasant St SE Minneapolis MN 55455 USA

2. Department of Chemical Engineering & Materials Science University of Minnesota 421 Washington Ave. SE Minneapolis MN 55455 USA

3. Department of Electrical and Computer Engineering University of Minnesota 200 Union Street SE Minneapolis MN 55455 USA

Funder

National Science Foundation

Materials Research Science and Engineering Center, Harvard University

National Nanotechnology Coordinating Office

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201902028

Reference72 articles.

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4. Electrolyte-Gated WO3 Transistors: Electrochemistry, Structure, and Device Performance

5. Electrolyte-gated transistors based on phenyl-C61-butyric acid methyl ester (PCBM) films: bridging redox properties, charge carrier transport and device performance

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