Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping-Reference-Cited by-同舟云学术

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Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping

Published:2016-04-13 Issue:23 Volume:26 Page:4223-4230
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhou Changjian¹,Zhao Yuda¹²,Raju Salahuddin³,Wang Yi¹,Lin Ziyuan¹,Chan Mansun³,Chai Yang¹²

Affiliation:

1. Department of Applied Physics; The Hong Kong Polytechnic University; Kowloon Hong Kong

2. The Hong Kong Polytechnic University Shenzhen Research Institute; Shen Zhen 518057 P. R. China

3. Department of Electronic and Computer Engineering; The Hong Kong University of Science and Technology; Kowloon Hong Kong

Funder

Research Grant Council of Hong Kong

National Natural Science Foundation of China

Hong Kong Polytechnic University

AOE grant

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Nanowire-based one-dimensional electronics

2. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

3. Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

4. Graphene transistors

5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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2. Improvement of Contact Resistance and 3D Integration of 2D Material Field‐Effect Transistors Using Semi‐Metallic PtSe₂ Contacts;Advanced Functional Materials;2024-08-02

3. Controlled Fabrication of Metallic MoO₂ Nanosheets towards High‐Performance p‐Type 2D Transistors;Small;2024-07-11

4. Van der Waals polarity-engineered 3D integration of 2D complementary logic;Nature;2024-05-29

5. Controllable carrier transfer modulation of ambipolar van der Waals semiconductors toward forksheet FETs;Applied Physics Letters;2024-05-20

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