End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Author:

Cao Qing1,Han Shu-Jen1,Tersoff Jerry1,Franklin Aaron D.1,Zhu Yu1,Zhang Zhen1,Tulevski George S.1,Tang Jianshi1,Haensch Wilfried1

Affiliation:

1. IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA.

Abstract

Making better small contacts Semiconducting single-walled carbon nanotubes have potential size and conductivity advantages over silicon for making smaller transistors. However, as metal electrical contacts decrease in size, the associated resistance increases to impractical values. Cao et al. reacted molybdenum films with semiconducting carbon nanotubes to create a carbide contact. The resistance of these contacts remained low even for 10-nm-scale contacts. Science , this issue p. 68

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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