Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices-Reference-Cited by-同舟云学术

Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices

Published:2016-08-31 Issue:41 Volume:26 Page:7406-7414
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Sung Kyu¹²,Kim Jong Yoon³,Jang Byung Chul³,Cho Mi Sun⁴,Choi Sung-Yool³,Lee Jeong Yong¹²,Jeong Hu Young⁴

Affiliation:

1. Center for Nanomaterials and Chemical Reactions; Institute for Basic Science (IBS); 70 Yuseong-daero 1689-gil Yuseong-gu, Daejeon 34047 South Korea

2. Department of Materials Science and Engineering; Korea Advanced Institute of Science and Technology (KAIST); 291 Daehak-ro Yuseong-gu, Daejeon 34141 South Korea

3. Graphene Research Center and School of Electrical Engineering; Korea Advanced Institute of Science and Technology (KAIST); 291 Daehak-ro Yuseong-go, Daejeon 34141 South Korea

4. UNIST Central Research Facilities (UCRF), Ulsan National Institute of Science and Technology (UNIST); 50 UNIST-gil Ulsan 44919 South Korea

Funder

Ministry of Education

Ulsan National Institute of Science and Technology

Global Frontier Research Center of Advanced Soft Electronics

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Nanoionics-based resistive switching memories

2. In situ TEM Observation of Resistance Switching in Titanate Based Device