Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectrics-Reference-Cited by-同舟云学术

Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectrics

Published:2013-10-25 Issue:10 Volume:24 Page:1409-1417
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Marincel Daniel M.¹,Zhang Huairuo²,Kumar Amit³,Jesse Stephen³,Kalinin Sergei V.³,Rainforth W. M.²,Reaney Ian M.²,Randall Clive A.¹,Trolier-McKinstry Susan¹

Affiliation:

1. Department of Materials Science and Engineering and Materials Research Institute; The Pennsylvania State University; University Park PA 16802 USA

2. Department of Materials Science and Engineering; University of Sheffield; Sheffield S13JD UK

3. The Center for Nanophase Materials Sciences; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201302457/fullpdf

Reference33 articles.

1. Subcoercive Cyclic Electrical Loading of Lead Zirconate Titanate Ceramics I: Nonlinearities and Losses in the Converse Piezoelectric Effect

2. Domain wall pinning contribution to the nonlinear dielectric permittivity in Pb(Zr, Ti)O3 thin films

3. Grain size effect on the dielectric nonlinearity of BaTiO3 ceramics

4. The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics

5. Revealing the role of defects in ferroelectric switching with atomic resolution

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