Revealing the role of defects in ferroelectric switching with atomic resolution-Reference-Cited by-同舟云学术

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Revealing the role of defects in ferroelectric switching with atomic resolution

Published:2011-09 Issue:1 Volume:2 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Gao Peng,Nelson Christopher T.,Jokisaari Jacob R.,Baek Seung-Hyub,Bark Chung Wung,Zhang Yi,Wang Enge,Schlom Darrell G.,Eom Chang-Beom,Pan Xiaoqing

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms1600.pdf

Reference31 articles.

1. Scott, J. F. Applications of modern ferroelectrics. Science 315, 954–959 (2007).

2. Scott, J. F. & De Araujo, C. A. P. Ferroelectric memories. Science 246, 1400–1405 (1989).

3. Garcia, V. et al. Giant tunnel electroresistance for non-destructive readout of ferroelectric states. Nature 460, 81–84 (2009).

4. Garcia, V. et al. Ferroelectric control of spin polarization. Science 327, 1106–1110 (2010).

5. Tsymbal, E. Y. & Kohlstedt, H. Applied physics—tunneling across a ferroelectric. Science 313, 181–183 (2006).

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