Defect Modulation Doping-Reference-Cited by-同舟云学术

Defect Modulation Doping

Published:2019-02-10 Issue:14 Volume:29 Page:1807906
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Weidner Mirko¹,Fuchs Anne¹,Bayer Thorsten J. M.¹,Rachut Karsten¹,Schnell Patrick¹,Deyu Getnet K.¹,Klein Andreas¹^ORCID

Affiliation:

1. Technische Universität DarmstadtFachbereich Material‐ und GeowissenschaftenFachgebiet Oberflächenforschung Otto‐Berndt‐Str. 3 64287 Darmstadt Germany

Funder

Deutsche Forschungsgemeinschaft

H2020 Marie Skłodowska-Curie Actions

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201807906

Reference63 articles.

1. Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” inn-Type III-V Semiconductors

2. Intrinsic limitations to the doping of wide-gap semiconductors

3. XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors

4. Transparent conducting oxide semiconductors for transparent electrodes

5. Past achievements and future challenges in the development of optically transparent electrodes

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