BiSbSe3: A promising Te-free thermoelectric material

Author:

Wang Sining1ORCID,Qiu Yuting2ORCID,Zhao Li-Dong13ORCID

Affiliation:

1. School of Materials Science and Engineering, Beihang University 1 , Beijing 100191, China

2. Beihang School, Beihang University 2 , Beijing 100191, China

3. Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province (2021E10022), Hangzhou Innovation Institute of Beihang University 3 , Hangzhou 310051, China

Abstract

BiSbSe3 is a Te-free thermoelectric material with a chain-like complex crystal structure and multiple band configuration. This work overviews recent advancements in BiSbSe3, clearly demonstrating its excellent thermal and electrical characteristics. The strategies to optimize the thermoelectric performance of BiSbSe3 mainly focus on two aspects: manipulating carrier concentration and effective mass based on multiple conduction bands, and elevating carrier mobility based on maneuvering electrical parameters and microstructures. Additionally, strategies for boosting the carrier mobility are outlined as the prospects for the future development of BiSbSe3, including sharpening bands, improving orientation, and designing composites.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Natural Science Foundation of Beijing Municipality

Overseas Expertise Introduction Project for Discipline Innovation

National Science Fund for Distinguished Young Scholars

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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