Evidence for Chemicals Intermingling at Silicon/Titanium Oxide (TiO x ) Interface and Existence of Multiple Bonding States in Monolithic TiO x-Reference-Cited by-同舟云学术

Evidence for Chemicals Intermingling at Silicon/Titanium Oxide (TiO x ) Interface and Existence of Multiple Bonding States in Monolithic TiO x

Published:2018-05-18 Issue:28 Volume:28 Page:1707018
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Dwivedi Neeraj¹,Yeo Reuben J.²,Tan Hui R.³,Stangl Rolf⁴,Aberle Armin G.⁴,Bhatia Charanjit S.¹,Danner Aaron¹,Liao Baochen⁴

Affiliation:

1. Department of Electrical and Computer Engineering; National University of Singapore; Singapore 117583 Singapore

2. Institute of Materials; Ecole Polytechnique Fédérale de Lausanne (EPFL); 1015 Lausanne Switzerland

3. Institute of Materials Research and Engineering; A*STAR (Agency for Science Technology and Research); 2 Fusionopolis Way Singapore 138634 Singapore

4. Solar Energy Research Institute of Singapore; National University of Singapore; Singapore 117574 Singapore

Funder

National University of Singapore

National Research Foundation Singapore

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201707018/fullpdf

Reference67 articles.

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3. Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

4. Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3

5. Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

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