Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

Author:

Dalapati G. K.1,Chia C. K.1,Tan C. C.1,Tan H. R.1,Chiam S. Y.1,Dong J. R.2,Das A.34,Chattopadhyay S.34,Mahata C.5,Maiti C. K.5,Chi D. Z.1

Affiliation:

1. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Jiangsu 215125, China

3. Department of Electronic Science, University of Calcutta, 92-A. P. C. Road, Kolkata, India 700 009

4. Centre for Research in Nanoscience and Nanotechnology (CRNN), University of Calcutta, JD-2 Sector III, Kolkata, India 700 098

5. Department of Electronics and ECE, Indian Institute of Technology-Kharagpur, India 721302

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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