Double Negative Differential Transconductance Characteristic: From Device to Circuit Application toward Quaternary Inverter-Reference-Cited by-同舟云学术

Double Negative Differential Transconductance Characteristic: From Device to Circuit Application toward Quaternary Inverter

Published:2019-09-25 Issue:48 Volume:29 Page:1905540
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lim Ji‐Hye¹,Shim Jaewoo²,Kang Beom‐Seok¹,Shin Gicheol³,Kim Hyeongjun⁴,Andreev Maksim⁴,Jung Kil‐Su⁵,Kim Kwan‐Ho⁴,Choi Jae‐Woong⁶,Lee Yoonmyung³,Park Jin‐Hong¹⁴⁵⁶^ORCID

Affiliation:

1. School of Electronic and Electrical EngineeringSungkyunkwan University Suwon 440‐746 South Korea

2. Department of Mechanical EngineeringMassachusetts Institute of Technology Cambridge MA 02139 USA

3. Department of Semiconductor Systems EngineeringSungkyunkwan University Suwon 440‐746 South Korea

4. Department of Electrical and Computer EngineeringSungkyunkwan University Suwon 440‐746 South Korea

5. Department of Semiconductor and Display EngineeringSungkyunkwan University Suwon 440‐746 South Korea

6. SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University Suwon 440‐746 South Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201905540

Reference36 articles.

1. Voltage-controlled multiple-valued logic design using negative differential resistance devices

2. Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio

3. The Prospects for Multivalued Logic: A Technology and Applications View

4. Multiple-Valued Logic—its Status and its Future

5. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-Dimensional SnSe_2(1–x)S_2x/MoTe₂ Antiambipolar Transistors with Composition Modulation for Multivalued Inverters;ACS Applied Materials & Interfaces;2024-08-05

2. Configurable anti-ambipolar photoresponses for optoelectronic multi-valued logic gates;Applied Physics Letters;2024-07-29

3. Designing double isolated bands and subgap states in two-dimensional X PS3 ( X = Al,Ga,In,Tl ) for achieving bi-anti-ambipolar transport;Physical Review Applied;2024-06-05

4. Multifunctional Phototransistor Based on Double Van der Waals Heterojunction with Reversed Band Edge Bending;Advanced Functional Materials;2024-04-16

5. A complementary ternary inverter based on the line tunneling field effect transistors;Microelectronics Journal;2024-03