Interface Doping for Ohmic Organic Semiconductor Contacts Using Self-Aligned Polyelectrolyte Counterion Monolayer-Reference-Cited by-同舟云学术

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Interface Doping for Ohmic Organic Semiconductor Contacts Using Self-Aligned Polyelectrolyte Counterion Monolayer

Published:2017-03-31 Issue:18 Volume:27 Page:1606291
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Seah Wei-Ling¹,Tang Cindy G.¹,Png Rui-Qi¹,Keerthi Venu²,Zhao Chao¹,Guo Han²,Yang Jin-Guo¹,Zhou Mi³,Ho Peter K. H.¹,Chua Lay-Lay¹²

Affiliation:

1. Department of Physics; National University of Singapore; Lower Kent Ridge Road Singapore S117552 Singapore

2. Department of Chemistry; National University of Singapore; Lower Kent Ridge Road Singapore S117550 Singapore

3. BASF SE, FET systems; Carl-Bosch-Strasse 38 Ludwigshafen 67056 Germany

Funder

National Research Foundation, Prime Minister's Office, Singapore

BASF SE

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

2. Charge Injection in Solution-Processed Organic Field-Effect Transistors: Physics, Models and Characterization Methods

3. Contact engineering in organic field-effect transistors

4. Solar cell contact resistance—A review

5. Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects

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