Abstract
Abstract
Organic field-effect transistors (OFETs) have been widely studied, but there are still challenges to achieving large-scale integration in organic complementary metal–oxide–semiconductor (CMOS) circuits. In this article, we discuss the issues on organic CMOS circuits from a device perspective. Our discussion begins with a systematic analysis of the principal parameters of the building block, a CMOS inverter, including gain, noise margin, and power dissipation, as well as the relevant challenges and the potential solutions. We then review state-of-the-art organic CMOS inverters and their fabrications. Finally, we focus on the approaches to optimize organic CMOS circuits from a specific point of view of the contact engineering, particularly for N-type OFETs.
Funder
National Natural Science Foundation of China
Nanjing University of Posts and Telecommunications Start-Up Fund
Natural Science Foundation of Jiangsu Province, China
Natural Science Foundation of the Jiangsu Higher Education Institutions
Guangdong Province Research and Development Program in Key Fields
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics