Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures-Reference-Cited by-同舟云学术

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Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures

Published:2014-03-18 Issue:25 Volume:24 Page:3962-3969
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Rana Abhimanyu¹²,Lu Haidong³,Bogle Kashinath¹,Zhang Qi¹,Vasudevan Rama¹,Thakare Vishal²,Gruverman Alexei³,Ogale Satishchandra²,Valanoor Nagarajan¹

Affiliation:

1. School of Materials Science and Engineering; University of New South Wales (UNSW); Sydney 2052 Australia

2. Physical and Materials Chemistry Division; NCL, CSIR; Pune 411008 India

3. Department of Physics & Astronomy; University of Nebraska; Lincoln NE 68588-0111 USA

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201400110/fullpdf

Reference48 articles.

1. Ferroelectric Control of Spin Polarization

2. Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

5. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

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