Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage-Reference-Cited by-同舟云学术

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Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage

Published:2011-09-13 Issue:22 Volume:21 Page:4305-4313
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Park Min Hyuk,Lee Hyun Ju,Kim Gun Hwan,Kim Yu Jin,Kim Jeong Hwan,Lee Jong Ho,Hwang Cheol Seong

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201101073/fullpdf

Reference24 articles.

1. Ferroelectric Memories

2. Switching kinetics of lead zirconate titanate submicron thin‐film memories

3. Ferroelectricity in Ultrathin Perovskite Films

4. Enhancement of ferroelectricity at metal–oxide interfaces

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