Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory-Reference-Cited by-同舟云学术

Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory

Published:2021-12-30 Issue: Volume: Page:2101059
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Huang Biaohong¹²,Xie Zhongshuai³,Feng Dingshuai¹²,Li Lingli¹²,Li Xiaoqi¹²,Paudel Tula R.⁴,Han Zheng¹,Hu Weijin¹^ORCID,Yuan Guoliang³,Wu Tom⁵,Zhang Zhidong¹

Affiliation:

1. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences (IMR, CAS) Shenyang 110016 China

2. School of Material Science and Engineering University of Science and Technology of China (USTC) Shenyang 110016 China

3. School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

4. Department of Physics South Dakota School of Mines and Technology Rapid City SD 57701 USA

5. School of Materials Science and Engineering University of New South Wales (UNSW) Sydney NSW 2052 Australia

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101059

Reference59 articles.

1. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

2. Nanoionics-based resistive switching memories

3. The emergence of spin electronics in data storage

4. Thin-film ferroelectric materials and their applications

5. Nonvolatile Multistates Memories for High-Density Data Storage

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