Technologies and applications of Al-free high-power laser diodes
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Reference14 articles.
1. 8.8 W CW power from broad-waveguide Al-free active-region ( = 805 nm) diode lasers
2. 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating
3. Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers
4. Temperature-insensitive operation of real index guided 1.06 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes
5. High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Ga1−xInxAs1−yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode;Optics Letters;2022-02-23
2. Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination;Journal of Applied Physics;2018-10-07
3. Precise Facet Temperature Distribution of High- Power Laser Diodes: Unpumped Window Effect;IEEE Photonics Technology Letters;2015-05-01
4. 1.0μm High-power and Broad Spectral Bandwidth Superluminescent Diodes;IEEJ Transactions on Electronics, Information and Systems;2013
5. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers;Laser & Photonics Reviews;2011-03-07
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