Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination-Reference-Cited by-同舟云学术

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Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Published:2018-10-07 Issue:13 Volume:124 Page:133105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zubov F. I.¹^ORCID,Muretova M. E.¹,Asryan L. V.²^ORCID,Semenova E. S.³^ORCID,Maximov M. V.¹,Zhukov A. E.¹⁴

Affiliation:

1. Nanophotonics Lab, St. Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg 194021, Russia

2. Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA

3. Department of Photonics Engineering, Technical University of Denmark, DTU Fotonik, Kgs. Lyngby, DK 2800, Denmark

4. Optoelectronics Department, St. Petersburg State Electrotechnical University “LETI,” St. Petersburg 197376, Russia

Funder

Russian Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5039442

Reference24 articles.

1. 100-W+ diode laser bars show > 71% power conversion from 790- nm to 1000-nm and have clear route to > 85%

2. The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300 K

3. Progress in increasing the maximum achievable output power of broad area diode lasers

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties;ECS Journal of Solid State Science and Technology;2024-06-03

2. Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region;Optics Communications;2023-06

3. Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide;Semiconductors;2022-04

4. Effect of Ga_1−xInxAs_1−yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode;Optics Letters;2022-02-23

5. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide;Quantum Electronics;2021-02-01

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