Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil-Reference-Cited by-同舟云学术

Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

Published:2013-09 Issue:9 Volume:21 Page:369-375
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Nag Manoj¹²,Rockele Maarten¹²,Steudel Soeren¹,Chasin Adrian¹²,Myny Kris¹,Bhoolokam Ajay¹²,Willegems Myriam¹,Smout Steve¹,Vicca Peter¹,Ameys Marc¹,Ke Tung Huei¹,Schols Sarah¹,Genoe Jan¹,van der Steen Jan-Laurens P. J.³,Groeseneken Guido¹²,Heremans Paul¹²

Affiliation:

1. Imec; Kapeldreef 75 3001 Leuven Belgium

2. ESAT; Katholieke Universiteit Leuven; Kasteelpark Arenberg 10 3001 Leuven Belgium

3. Holst Centre; High Tech Campus 31 5656 AE Eindhoven The Netherlands

Funder

European Community's Seventh Framework Program

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jsid.189/fullpdf

Reference17 articles.

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2. Review of recent developments in amorphous oxide semiconductor thin film transistor devices;Park;Thin Solid Films,2012

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4. Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors;Chiang;J. Non-Cryst. Solids,2008

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