An alternative method to extract the parasitic capacitances of GaN FETs-Reference-Cited by-同舟云学术

An alternative method to extract the parasitic capacitances of GaN FETs

Published:2014-11-18 Issue:1 Volume:57 Page:223-225
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Loo-Yau J. R.¹,Tapia-Sánchez I.¹,Moreno P.¹

Affiliation:

1. Centro de Investigación y Estudios Avanzados del I. P. N. Unidad Guadalajara; Av. Científica 1145, Colonia El Bajío, C. P. 45015 Zapopan Jalisco México

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.28816/fullpdf

Reference13 articles.

1. A new method for determining the FET small-signal equivalent circuit;Dambrine;IEEE Trans Microwave Theory Tech,1988

2. Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from Cold-FET;White;IEEE Microwave Guided Wave Lett,1993

3. R. Tayrani J.R. Gerber T. Daniel R.S. Pengelly U.L. Rohde 1993 451 453

4. A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits;Lai;IEEE Trans Microwave Theory Tech,2011

5. An improved but reliable model for MESFET parasitic capacitance extraction;Ooi;In: IEEE radio frequency integrated circuits symposium,2003

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