A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers-Reference-Cited by-同舟云学术

A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers

Published:2021-01-17 Issue:3 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Ochoa‐Armas Daniel¹^ORCID,Lavandera‐Hernández Ismary¹^ORCID,Fernández‐Ramón Daniel¹,Loo‐Yau José R.¹^ORCID,Molina‐Ceseña Marlon²,Pérez‐Wences Caín³^ORCID,Hernández‐Domínguez Ernesto A.¹,Reynoso‐Hernández J. Apolinar²^ORCID,Moreno Pablo¹

Affiliation:

1. Centro de Investigación y Estudios Avanzados del I. P. N. Unidad Guadalajara Zapopan Jalisco Mexico

2. Centro de Investigación Científica y Estudios Superiores de Ensenada Ensenada Baja California Mexico

3. Department of Electronics and Control Centro de Tecnología Avanzada CIATEQ A. C. Zapopan Jalisco Mexico

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22552

Reference37 articles.

1. Large- and small-signal IMD behavior of microwave power amplifiers

2. A new empirical nonlinear model for HEMT and MESFET devices

3. An empirical I-V nonlinear model suitable for GaN FET class F PA design

4. Nonlinear Device Model of Microwave Power GaN HEMTs for High Power-Amplifier Design

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