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An empirical I-V nonlinear model suitable for GaN FET class F PA design

  • Published:2011-03-25 Issue:6 Volume:53 Page:1256-1259
  • ISSN:0895-2477
  • Container-title:Microwave and Optical Technology Letters
  • language:en
  • Short-container-title:Microw. Opt. Technol. Lett.

Author:

García-Osorio A.,Loo-Yau J. R.,Reynoso-Hernández J. A.,Ortega-C. Susana,del Valle-Padilla J. L.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. A new empirical model for HEMT and MESFET devices;Angelov;IEEE Trans Microwave Theory Tech,1992

2. D. Root B. Hughes 1988

3. P.M. Cabral J.C. Pedro N. Borges 2004 51 54

4. I. Angelov V. Desmaris K. Dynefors 2005 309 312

5. Analytical nonlinear HEMT model for large signal circuit simulation;Tanimoto;IEEE Trans Microwave Theory Tech,1996

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1. A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers;International Journal of RF and Microwave Computer-Aided Engineering;2021-01-17

2. Power amplifier design principles;Switchmode RF and Microwave Power Amplifiers;2021

3. Evaluating substrate's effect on RF switch performance via Verilog-A GaN HEMT model;Microelectronics Journal;2017-04

4. An improved model for current voltage characteristics of submicron SiC MESFETs;Solid-State Electronics;2016-07

5. 2 Power Amplifier Design Principles;Broadband RF and Microwave Amplifiers;2015-10-15
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