Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Physics and Astronomy,General Engineering
Link
http://xplorestaging.ieee.org/ielx4/75/6432/00251398.pdf?arnumber=251398
Cited by 70 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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3. New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors;Electronics;2023-07-11
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5. An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs;Engineering Research Express;2021-01-18
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