Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities-Reference-Cited by-同舟云学术

Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

Published:2016-06-28 Issue:12 Volume:24 Page:1615-1625
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Joonwichien Supawan¹,Takahashi Isao¹,Kutsukake Kentaro²,Usami Noritaka¹

Affiliation:

1. Graduate School of Engineering; Nagoya University; Nagoya 464-8603 Japan

2. Institute for Materials Research (IMR); Tohoku University; Sendai 980-8577 Japan

Funder

New Energy and Industrial Technology Development Organization (NEDO) of Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2795/fullpdf

Reference25 articles.

1. The role of the grain boundary plane in cubic polycrystals;Randle;Acta Materialia,1998

2. Influence of structural imperfection of Ʃ5 grain boundaries in bulk multicrystalline Si on their electrical activities;Kutsukake;Journal of Applied Physics,2007

3. Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance;Kutsukake;Journal of Applied Physics,2009

4. Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities;Takahashi;Journal of Applied Physics,2011

5. Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si;Joonwichien;Journal of Applied Physics,2013

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