Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy-Reference-Cited by-同舟云学术

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Published:2021-12-29 Issue: Volume: Page:2101289
ISSN:2366-9608
Container-title:Small Methods
language:en
Short-container-title:Small Methods

Author:

Alikin Denis¹^ORCID,Abramov Alexander¹,Turygin Anton¹,Ievlev Anton²,Pryakhina Victoria¹,Karpinsky Dmitry³,Hu Qingyuan⁴,Jin Li⁴,Shur Vladimir¹,Tselev Alexander⁵,Kholkin Andrei¹⁵⁶

Affiliation:

1. School of Natural Sciences and Mathematics Ural Federal University Ekaterinburg 620000 Russia

2. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37830 USA

3. Scientific‐Practical Materials Research Centre of NAS of Belarus Minsk 220072 Belarus

4. Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Xi'an Jiaotong University Xi'an 710049 China

5. Department of Physics & CICECO University of Aveiro 3810‐193 Aveiro Portugal

6. Piezo‐ and Magnetoelectric Materials Research & Development Centre Research School of Chemistry & Applied Biomedical Sciences National Research Tomsk Polytechnic University Tomsk 634050 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smtd.202101289

Reference76 articles.

1. Next-generation ferroelectric domain-wall memories: principle and architecture

2. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

3. Ferroelectric tunnel junctions with graphene electrodes