A design guideline of parasitic inductance for preventing oscillatory false triggering of fast switching GaN‐FET-Reference-Cited by-同舟云学术

A design guideline of parasitic inductance for preventing oscillatory false triggering of fast switching GaN‐FET

Published:2016-12 Issue:S2 Volume:11 Page:
ISSN:1931-4973
Container-title:IEEJ Transactions on Electrical and Electronic Engineering
language:en
Short-container-title:IEEJ Trans Elec Electron Eng

Author:

Umetani Kazuhiro¹,Yagyu Keisuke²,Hiraki Eiji¹

Affiliation:

1. Graduate School of Natural Science and Technology Okayama University 3‐1‐1 Tsushima‐naka, Kita‐ku, Okayama 700‐8530 Japan

2. DENSO CORPORATION 1‐1 Showa‐cho, Kariya, Aichi 448‐8661 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/tee.22339

Reference9 articles.

1. KhanMA SiminG PytelSG MontiA SantiE HudginsJL.New developments in gallium nitride and the impact on power electronics.Proceedings of the IEEE Power Electronics Specialist Conference (PESC2005) 2005;15–26.

2. An Efficient High-Frequency Drive Circuit for GaN Power HFETs

3. MurataK.HaradaK.A self turn‐on mechanism of the synchronous rectifier in a DC/DC converter.Proceedings of the IEEE Telecommunications Energy Conference (INTELEC2004) 2004;642–646.

4. Texas Instruments.LM5113 datasheet 2012.

5. EPC Corporation. eGaN FET Drivers and Layout Considerations.White Paper WP008 2012.

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