Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

Author:

Tahir Mustafa,Hu Sideng,He Xiangning

Abstract

Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.

Funder

National Natural Science Foundation of China

Publisher

Frontiers Media SA

Subject

Economics and Econometrics,Energy Engineering and Power Technology,Fuel Technology,Renewable Energy, Sustainability and the Environment

Reference215 articles.

1. A 1-MHz Hard-Switched Silicon Carbide DC-DC Converter;Abou-Alfotouh;IEEE Trans. Power Electron.,2006

2. Evaluation of SiC JFETs and SiC Schottky Diodes for Wind Generation Systems;Adamowicz,2011

3. Predicting SiC MOSFET Behavior under Hard-Switching, Soft-Switching, and False Turn-On Conditions;Ahmed;IEEE Trans. Ind. Electron.,2017

4. Measurement of the Common Source Inductance of Typical Switching Device Packages;Aikawa,2017

5. The Impact of Parasitic Inductance on the Performance of Silicon-Carbide Schottky Barrier Diodes;Alatise;IEEE Trans. Power Electron.,2012

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3