Structure of Gd2O3films epitaxially grown on GaAs(100) and GaN(0001) surfaces-Reference-Cited by-同舟云学术

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Structure of Gd2O3films epitaxially grown on GaAs(100) and GaN(0001) surfaces

Published:2002-08 Issue:1 Volume:34 Page:441-444
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Flückiger T.,Erbudak M.,Hensch A.,Weisskopf Y.,Hong M.,Kortan A. R.

Funder

ETH Zürich.

Schweizerischer Nationalfonds.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

2. Structure of epitaxialGd2O3films grown on GaAs(100)

3. Structural modifications of theGd2O3(110)films on GaAs(100)

4. INVESTIGATION OF SYMMETRY PROPERTIES OF SURFACES BY MEANS OF BACKSCATTERED ELECTRONS

5. Physics at Surfaces

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1. Unraveling the electronic structures in different phases of gadolinium sesquioxides performed by electron energy loss spectroscopy;AIP Advances;2020-10-01

2. Leakage current characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-oxide-semiconductor capacitor;RSC Advances;2015

3. Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs;Applied Surface Science;2014-02

4. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates;Surface Science Reports;2013-03

5. Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2 O3 films on GaAs substrates;Surface and Interface Analysis;2011-02-08

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