Leakage current characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-oxide-semiconductor capacitor
Author:
Affiliation:
1. Materials Science Centre
2. Indian Institute of Technology
3. Kharagpur 721 302
4. India
5. Advanced Technology Development Centre
Abstract
Carrier transport vis-a-vis leakage current in GaAs MOS capacitors with various structures; quantum dot embedded devices show the lowest leakage.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA15642D
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4. Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2 O3 films on GaAs substrates
5. Structure of Gd2O3films epitaxially grown on GaAs(100) and GaN(0001) surfaces
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