A novel approach to extract accurate design parameters of PiN diode

Author:

Ben Salah Tarek,Ghédira Sami,Garrab Hatem,Morel Hervé,Riseletto Damien,Besbes Kamel

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference31 articles.

1. Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation

2. Modelling an insulated gate bipolar transistor using bond graph techniques

3. , , . Switching parameter maps—a new approach of the validity domain of power device models. IEEE PESC'03, Acapulco, Mexico, 2003; 1220–1225.

4. , , . Full dynamic power bipolar device models for circuit simulation. Proceedings of IEEE PESC, Fukuoka, Japan, 1998; 1695–1703.

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4. A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems;IEEE Transactions on Industrial Electronics;2015-04

5. An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-06-16

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