Identification of power PIN diode design parameters: Circuit and device-based simulation approach-Reference-Cited by-同舟云学术

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Identification of power PIN diode design parameters: Circuit and device-based simulation approach

Published:2021-09 Issue:3 Volume:12 Page:3141-3155
ISSN:2090-4479
Container-title:Ain Shams Engineering Journal
language:en
Short-container-title:Ain Shams Engineering Journal

Author:

Shaker A.,Salem Marwa S.,Zekry A.,El-Banna M.,Sayah G.T.,Abouelatta M.

Publisher

Elsevier BV

Subject

General Engineering

Reference41 articles.

1. B. J. Baliga, Fundamentals of power semiconductor devices, Springer Science & Business Media, New York, 2010.

2. Semiconductor power devices: Physics, characteristics, reliability;Lutz,2018

3. Power semiconductors;Linder,2006

4. Circuit simulator models for the diode and IGBT with full temperature dependent features;Palmer;IEEE Trans Power Electron,2003

5. On the extraction of PIN diode design parameters for validation of integrated power converter design;Garrab;IEEE Trans Power Electron,2005

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Parameters Extraction Method of High‐Speed PIN Diode for Power Integrated Circuit;Nanodevices for Integrated Circuit Design;2023-10-17

2. Electrical and Electronic Properties of Magnesium/Molybdenum Disulfide Heterojunction Field Effect Transistors: A Theoretical Study;Science of Advanced Materials;2023-07-01

3. Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor;Sensors;2023-05-09

4. A simple method for accurate modeling of diode parameters;Energy Reports;2022-11

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