Modelling an insulated gate bipolar transistor using bond graph techniques

Author:

Besbes Kamel

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference9 articles.

1. Simulation by bond graphs: introduction to graphical method, Springer-Verlag, Berlin, 1990.

2. An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)

3. and , ‘Power electronic simulation using bond graphs and transmission line modelling’, Proc. EPE, Firenze, 1991, pp. 85-89.

4. and , ‘A novel simulation of power switching bipolar transistor’, IEEE Power Electronic Specialist Conference 1992, Toledo, Spain.

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