A procedure for the extraction of a nonlinear microwave GaN FET model-Reference-Cited by-同舟云学术

A procedure for the extraction of a nonlinear microwave GaN FET model

Published:2016-03-21 Issue:1 Volume:30 Page:e2151
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Avolio Gustavo¹,Vadalà Valeria²,Angelov Iltcho³,Raffo Antonio²,Marchetti Mauro⁴,Vannini Giorgio²,Schreurs Dominique¹

Affiliation:

1. KU Leuven; Department ESAT-TELEMIC; Kasteelpark Arenberg 10 3001 Heverlee Belgium

2. University of Ferrara; Dipartimento di Ingegneria; via G. Saragat 1 44122 Ferrara Italy

3. Chalmers University of Technology; Göteborg Sweden

4. Anteverta-mw B.V.; Maury Microwave Company; Delft The Netherlands

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2151/fullpdf

Reference47 articles.

1. Error-corrected large-signal waveform measurement system combining network analyzer and sampling oscilloscope capabilities;Kompa;IEEE Trans Microwave Theory Tech,1990

2. Calibrated vectorial nonlinear-network analyzers;Van den Broek;IEEE MTTS Int Microw Symp Dig,1994

3. 40 GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization;Teyssier;IEEE Trans Microwave Theory Tech,1998

4. A. E. Parker J. G. Rathmell Measurement and Characterisation of HEMT Dynamics Asia-Pacific Microwave Conference Proceedings 2000 846 849 Sydney Australia

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