Properties of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2-Reference-Cited by-同舟云学术

Properties of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 2

Published:2009-03 Issue:1-3 Volume:15 Page:47-52
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Walkiewicz-Pietrzykowska Agnieszka,Wrobel Aleksander M.,Glebocki Bartosz

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference18 articles.

1. Characterization of the mechanical properties of a–SiC: H films

2. Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors

3. Microwave Plasma CVD in the System Si-C-H-Ar: Effect of Process Parameters

4. On the nature of microwave deposited hard silicon-carbon films

5. Properties of a-Si1−x Cx:H thin films deposited from the organosilane Triethylsilane

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