Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors-Reference-Cited by-同舟云学术

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Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors

Published:1994-01 Issue:1 Volume:12 Page:90-96
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Loboda M. J.,Seifferly J. A.,Dall F. C.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578864

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Molecular Layer Deposition and Pyrolysis of Polyamide Films on Si(111) with Formation of β-SiC;Russian Journal of Physical Chemistry A;2021-07

3. p+aSixC1-x: H/i-aSi:H/n+aSi1-xGex:H graded band gap single junction solar cell with composition graded amorphous silicon carbon alloy as window layer;Materials Today: Proceedings;2021

4. Improved electrical transport properties in high quality nanocrystalline silicon carbide (nc-SiC) thin films for microelectronic applications;Materials Letters;2016-02

5. Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 2. Surface morphology and properties of deposited a-SiC:H films;Thin Solid Films;2014-08

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