Silicon Doping of Gallium Nitride Using Ditertiarybutylsilane-Reference-Cited by-同舟云学术

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Silicon Doping of Gallium Nitride Using Ditertiarybutylsilane

Published:2004-08 Issue:4 Volume:10 Page:187-190
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Deatcher C.J.,Liu C.,Cheong M.-G.,Smith L.M.,Rushworth S.,Widdowson A.,Watson I.M.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Role of doping and sheet size in tailoring optoelectronic properties of germanene: A TDDFT study;International Journal of Quantum Chemistry;2018-09-11

5. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications;Coordination Chemistry Reviews;2013-07

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