P-12: Self-Aligned Bottom Gate LTPS Backplanes without Ion-Implantation Process-Reference-Cited by-同舟云学术

P-12: Self-Aligned Bottom Gate LTPS Backplanes without Ion-Implantation Process

Published:2012-06 Issue:1 Volume:43 Page:1090-1093
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Kanegae Arinobu,Hayashi Hiroshi,Nishida Kenichirou,Saitoh Tohru,Komori Kazunori

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2012.tb05981.x/fullpdf

Reference5 articles.

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2. T. Kaitoh T. Miyazawa H. Miyake T. Noda T. Sakai Y. Owaku T. Saitoh SELAX Technology for Poly-Si TFTs Integrated with Amorphous-Si TFTs IDW '07 Digest 481 2007

3. K. Morimoto N. Suzuki M. Yuri K. Yamanaka J. Milliez X. Liu Advanced 405nm laser diodes crystallization of a-Si film for the fabrication of microcrystalline-Si TFTs IDW '10 Digest 611 2010

4. K. T. Kim J. H. Bae S. Lee B. G. Choi H. K. Lee S. K. Kim K. S. Park C. D. Kim Y. K. Hwang I. J. Chung Fabrication of 15 “HD AMOLED panel with Micro-Crystalline Silicon TFTs adopting Indirect Thermal Crystallization method,” IDW'10 Digest 615 2010

5. K. Lee Super Grain Silicon Technology for AMOLED TV Applications SID '11 Digest 175 2011

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