1. [1] A. Machida, T. Fujino, T. Kono, K. Takagi, S. Haga, S. Imanishi, and T. Kamei, “A poly-Si TFT fabricated by a novel laser-crystallization technique using Blu-ray disc technology,” SID 09 digest, no.P-6, pp.1100-1102, San Antonio, USA, 2009.
2. [2] T. Noguchi, Y. Chen, T. Miyahira, J.D.D. Mugiraneza, Y. Ogino, Y. Iida, E. Sahota, and M. Terao, “Advanced micro-polycrystalline silicon films formed by blue-multi-laser-diode annealing,” Jpn. J. Appl. Phys., vol.49, pp.03CA10-1-3, 2010.
3. [3] S. Yura, A. Sono, T. Okamoto, Y. Sato, T. Kojima, J. Nishimae, M. Inoue, and K. Motonami, “Crystallization of amorphous-Si films by pulsed YAG2omega; green laser for polycrystalline Si TFT fabrication,” J. SID, vol.13/10, pp.823-827, 2005.
4. [4] T. Okabe, T. Yaneda, T. Aita, T. Inoue, M. Takei, Y. Harumoto, H. Nishiki, and N. Kimura, “Microcrystalline silicon thin film transistors by Excimer laser annealing for large-sized TFT-LCDs,” Proc. IDW'09, no.AMD2-2, pp.257-260, Miyazaki, Japan, 2009.
5. [5] S.H. Cho, Y.M. Cho, Y.G. Jeong, H. Kim, S.H. Yang, J.H. Song, C. Jeong, and S.Y. Kim, “New process development for hybrid silicon thin film transistor,” IMID/IDMC/ASIA Display'08 Digest, no.P-3, pp.205-207, Seoul, Korea, 2008.